Catalog Field Effect Transistor (MOSFET)

Type 1 P-channel

Leakage source voltage (Vdss) 30V

Continuous drain current (Id) 10.5A

Power (Pd) 2.5W

Conduction resistance (RDS (on) @ Vgs, Id) 22m Ω @ 10V, 10.5A

Threshold voltage (Vgs (th) @ Id) 3V@250uA