Catalog Field Effect Transistor (MOSFET)

Type 1 N-channel

Leakage source voltage (Vdss) 200V

Continuous drain current (Id) 24A

Power (Pd) 150W

Conduction resistance (RDS (on) @ Vgs, Id) 80m Ω @ 10V, 15A

Threshold voltage (Vgs (th) @ Id) 4V@250uA